Innolume is the premier manufacturer of GaAs-based laser diodes covering 780nm-1340nm spectral window. Combination of wavelength coverage with Quantum Dots Technology and advanced chip design enables a number of novel industrial, medical, and communications applications.
Innolume runs full vertically integrated fab which allows fast turn-arounds in product development and modification of standard items for custom inquiries. Mainly concentrated on the chip production (current throughput exceeds 10M chips/year) Innolume holds highly reliable single mode fiber coupling technology.
Facilities, Infrastructure and Equipment
Innolume’s vertically integrated fabrication facilities include Molecular Beam Epitaxy systems for growth of complex monocrystalline layers on GaAs substrates, set of wafer processing machines, specific optical coating equipment, large complex of back-end equipment for chip processing and packaging with optical fiber. As well there are various measurement setups for R&D and product characterization. All these facilities are managed by the team of experienced technology engineers working together with a team of design engineers with deep understanding of optics and semiconductor physics.
Innolume participated in several FP6 and FP7 Integrated Projects (DOTCOM, ZODIAC, FAST-DOT, SEQUOIA) being there a workpackage leader. Also Innolume participated in national German research projects (Innotrans, MISTRAL, SHyWA, ElecTRIC) in cooperation with academic and industrial partners. A number of successful on the market new products were resulting from these projects.
Dr. Alexey Gubenko
Dr. Igor Krestnikov
Dr. Daniil Livshits
Relevant Publications and/or Research / Innovation Product
- SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME, United States Patent 6653166, Issued 25/11/2003.
- DEFECT-FREE SEMICONDUCTOR TEMPLATES FOR EPITAXIAL GROWTH AND METHOD OF MAKING SAME, United States Patent 6784074, Issued 31/8/2004.
- SINGLE-STEP-GROWN TRANSVERSELY COUPLED DISTRIBUTED FEEDBACK LASER, International Patent Application WO2014125116 A1, Published 8/21/2014